Title: Charge Transport and Storage Effect of Gold Ion Implanted Silicon Dioxide MOS Structure
Authors: 陳龍英
施敏
L.I.Chen
S.M.Sze
Issue Date: Apr-1971
Publisher: 交大學刊編輯委員會
Abstract: When gold ions of sufficiently high dose (~10^14 ions/cm^2) are implanted into thermally grown silicon dioxide MOS structure, novel charge transport and memory effect have been observed. For a typical structure with 800Å SiO2 and a projected ion range of 400Å, most of the induced interface states can be annealed out at 400℃. The charge transport in the implanted oxide is found to follow the Frenkel-Poole emission process with trapping energy level at 1.21 eV from the conduction band. Since the charge transport in the inner part of the oxide is by the Fowler-Nordheim tunneling mechanism, the MOS structure is equivalent to a double -layer memory device in which charges can be stored at the trapping centers inside the oxide when voltages are applied . Effects of oxide thickness, ion dose level, annealing temperature, and measurment temperature have been studied. Good agreements have been obtained between experimental results and theoretical predictions.
URI: http://hdl.handle.net/11536/137462
Journal: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 5
Issue: 1
Begin Page: 61
End Page: 76
Appears in Collections:Science Bulletin National Chiao-Tung University


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