標題: Temperature Dependence of Ionization Rates in GaAs
作者: 張義昭
施敏
Y.J.Chang
S.M.Sze
公開日期: 四月-1969
出版社: 交大學刊編輯委員會
摘要: The ionization rate is one of the most important material parameters of semiconductors. Its temperature dependence has profound effect on the avalanche breakdown voltage of p-n junctions and on the operational characteristics of many semiconductor devices including IMPATT diodes and avalanche photodetectors (1). The ionization rates of electrons and holes in GaAs are measured here in over the temperature range 77°K to 373°K using photomultiplication method. The results are then compared with the modified Baraff theory(2,3), in order to establish a functional dependence of the ionization rate on temperature.
URI: http://hdl.handle.net/11536/137449
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 3
Issue: 2
起始頁: 99
結束頁: 104
顯示於類別:交大學刊


文件中的檔案:

  1. HT001299-05.pdf