Title: Zinc Dopping Effects on MOS Structure
Authors: 張俊彥
曹貴有
C.Y.Chang
K.I.Tsao
Issue Date: Oct-1968
Publisher: 交大學刊編輯委員會
Abstract: It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.
URI: http://hdl.handle.net/11536/137441
Journal: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 3
Issue: 1
Begin Page: 67
End Page: 72
Appears in Collections:Science Bulletin National Chiao-Tung University


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