標題: Zinc Dopping Effects on MOS Structure
作者: 張俊彥
曹貴有
C.Y.Chang
K.I.Tsao
公開日期: 十月-1968
出版社: 交大學刊編輯委員會
摘要: It has been investigated that gold dopping into bulk of silicon can be used to controlling MOS transistor characteristics. However, zinc dopping into silicon , silicon dioxide as well as silicon dioxide- silicon interface has not yet been investigated.
URI: http://hdl.handle.net/11536/137441
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 3
Issue: 1
起始頁: 67
結束頁: 72
顯示於類別:交大學刊


文件中的檔案:

  1. HT001298-06.pdf