標題: The Fabrication and The Characteristics of Metal-Oxide-Semiconductor Transistors
作者: 郭雙發
張俊彥
陳福全
S.F.Guo
C.Y.Chang
F.C.Chen
公開日期: 四月-1967
出版社: 交大學刊編輯委員會
摘要: The theory of MOS transistors is introduced in brief and the design and the fabrication of MOS transistors are disgussed in detail. The experimental MOS transistor characteristics show the effects of the surface states and can be determined by the gate capacitance versus gate voltage characteristics by a spacially designed automatic curve tracer.
URI: http://hdl.handle.net/11536/137432
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 2
Issue: 2
起始頁: 78
結束頁: 86
顯示於類別:交大學刊


文件中的檔案:

  1. HT001297-07.pdf