標題: The Metal-Oxide-Semiconductor(MOS)Field-Effect Transistors
作者: 陳龍英
L.I.Chen
公開日期: 十月-1966
出版社: 交大學刊編輯委員會
摘要: The operation theory of MOS field-effect transistors based on some simplifying assumptions are analyzed. Then a simple method is presented to determine the effective surface carrier mobility, the parasitic resistance in the source region, and the transconductance in the saturation region. Some curves which are necessary in the method are plotted. The saturation drain current and gate voltage of these curves are normalized to the zero bias saturation drain current and pinch-off voltage respectively, thus this method is valid for different kinds of MOS transistors. The curves show that the parasitic resistance may be neglected for most of the practical MOS transistors.
URI: http://hdl.handle.net/11536/137423
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 2
Issue: 1
起始頁: 60
結束頁: 84
顯示於類別:交大學刊


文件中的檔案:

  1. HT001296-07.pdf