Title: Radiation,Temperature and Gain in n-p-n Planar Transistor
Authors: 張俊彥
郭双發
C.Y.Chang
S.F.Guo
Issue Date: Oct-1966
Publisher: 交大學刊編輯委員會
Abstract: The dependence of current amplification factor on emitter current, temperature, resistivities, surface treatments as well as on the radiation effects are investigated. The experiments show that the current amplification factor is more dependent on recombination and scattering mechanism than the other effects. Temperature effect is profound also, high temperature causes high gain(400% at 200℃), low temperature causes very low gain (5% at liquid oxygen). Both the neutron and the Υ-ray irradiation cause the Frenkel defect in the crystal and thus also decrease the current gain preatly. Recovery of gain is obtained by heating at 300℃, 150℃ etc. in dry nitrogen atmosphere and then followed by quick annealing.
URI: http://hdl.handle.net/11536/137421
Journal: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 2
Issue: 1
Begin Page: 41
End Page: 50
Appears in Collections:Science Bulletin National Chiao-Tung University


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