Title: RF MOSFET characterization by four-port measurement
Authors: Wu, SD
Huang, GW
Chen, KM
Tseng, HC
Hsu, TL
Chang, CY
Department of Electronics Engineering and Institute of Electronics
Keywords: 4-port;RF MOSFET;common source;common gate;common drain;substrate bias
Issue Date: 1-May-2005
Abstract: RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and commen drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.
URI: http://dx.doi.org/10.1093/ietele/e88-c.5.851
ISSN: 0916-8524
DOI: 10.1093/ietele/e88-c.5.851
Volume: E88C
Issue: 5
Begin Page: 851
End Page: 856
Appears in Collections:Conferences Paper