標題: Leakage conduction behavior in electron-beam-cured nanoporous silicate films
作者: Liu, PT
Tsai, TM
Chang, TC
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2-May-2005
摘要: This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 degrees C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film. (c) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1921329
http://hdl.handle.net/11536/13729
ISSN: 0003-6951
DOI: 10.1063/1.1921329
期刊: APPLIED PHYSICS LETTERS
Volume: 86
Issue: 18
結束頁: 
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