Title: Electronic transport studies on Sb1-x(SiO2)(x) films
Authors: Du, J
Li, ZQ
Lin, JJ
Liu, H
Zheng, RK
Chen, P
Rosenbaum, R
Zhang, XX
Department of Electrophysics
Institute of Physics
Issue Date: 4-May-2005
Abstract: Sb1-x(SiO2)(x) granular films were prepared by the co-sputtering method with the volume fraction of SiO2, x, ranging from 0 (i.e. pure Sb) to about 30 %. Systematic electronic transport studies, including resistivity, magnetoresistance, Hall effect and Seebeck effect, were carried out against the temperature, magnetic field and volume fraction x of SiO2. With the gradual increase of the SiO2 content, the mean grain size of the Sb decreases, and eventually the film becomes amorphous, as illustrated by the changes of the x-ray diffraction patterns. The temperature coefficient of resistivity also changes its sign from positive to negative, indicating a semimetal-semiconductor or insulator transition. Magnetoresistance studies using the weak localization theory revealed that the electron dephasing time follows approximately a T-2 law. This behaviour indicates that the electron-phonon (e-ph) scattering still dominates the electron dephasing processes in these granular systems with a fair number of SiO2 inclusions. The Hall coefficient decreases monotonically with temperature and with the volume fraction of SiO2. The giant Hall effect is absent in these granular films. Finally, an interesting but rather complicated behaviour of the Seebeck coefficient versus temperature was observed when the volume content of the SiO2 exceeded 18 %.
URI: http://dx.doi.org/10.1088/0953-8984/17/17/003
ISSN: 0953-8984
DOI: 10.1088/0953-8984/17/17/003
Volume: 17
Issue: 17
Begin Page: 2553
End Page: 2562
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