標題: Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer
作者: Cheng, HM
Hsu, HC
Tseng, YK
Lin, LJ
Hsieh, WF
光電工程學系
Department of Photonics
公開日期: 12-五月-2005
摘要: Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality ZnO nanowires with diameters of 80-100 nm and lengths of several micrometers were epitaxially grown through a simple low-pressure vapor-phase deposition method at temperature 550 ° C on the precoated GaN(0001) buffer layer. The increasing intensity ratio of n-order longitudinal optical (LO) phonon (A(1) (nLO)/E-1 (nLO)) with increasing scattering order in RRS reveals the phonon quantum confinement as shrinking the diameter of ZnO nanowires. The exciton-related recombination near the band-edge transition dominate the UV emissions at room temperature as well as at low temperature that exhibits almost no other nonstoichiometric defects in the ZnO nanowires.
URI: http://dx.doi.org/10.1021/jp0442908
http://hdl.handle.net/11536/13724
ISSN: 1520-6106
DOI: 10.1021/jp0442908
期刊: JOURNAL OF PHYSICAL CHEMISTRY B
Volume: 109
Issue: 18
起始頁: 8749
結束頁: 8754
顯示於類別:期刊論文


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