標題: Current-assisted magnetization switching in submicron permalloy S-shape wires with narrow junctions
作者: Chen, YC
Lin, YA
Chen, DC
Yao, YD
Lee, SF
Liou, Y
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 15-五月-2005
摘要: We report the results of the current-assisted magnetization switching in submicron permalloy S-shape wires with narrow junctions (or notches). Domain walls were initially formed and pinned in the vicinity of the notches. Two distinct behaviors are observed in the current-assisted magnetization reversal process. When the applied field is near switching field (Delta H < 7 Oe), the injected current directly switched the wire magnetization, and the needed critical current varied linearly and significantly with the field intensity. In contrast, when the field is relatively far from the switching field (Delta H > 7 Oe), the current only moves the domain wall to a local stable state, and the critical current varied slightly with the field. Moreover, two resistance jumps during current scanning are observed in the cases with magnetization reversals. These results reveal that the current driven effect is closely related to the initial domain states, and are explained by a theoretical model based on spin transfer effect. (c) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1850254
http://hdl.handle.net/11536/13714
ISSN: 0021-8979
DOI: 10.1063/1.1850254
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 97
Issue: 10
結束頁: 
顯示於類別:會議論文


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  1. 000230168500073.pdf