標題: Threshold current density of electromigration in eutectic SnPb solder
作者: Yeh, YT
Chou, CK
Hsu, YC
Chen, C
Tu, KN
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 16-五月-2005
摘要: Electromigration has emerged as an important reliability issue in the microelectronics packaging industry since the dimension of solder joints has continued to shrink. In this letter, we report a technique that enables the precise measurement of the important parameters of solder electromigration, such as activation energy, critical length, threshold current density, effective charge numbers, and electromigration rate. Patterned Cu/Ti films in a Si trench were employed for eutectic SnPb solder to be reflowed on, and thus solder Blech specimens were fabricated. Atomic force microscope was used to measure the depletion volume caused by electromigration on the cathode end. The threshold current density is estimated to be 8.5x10(3) A/cm(2) at 100 degrees C, which relates directly to the maximum allowable current that a solder joint can carry without electromigration damage. This technique facilitates the scientifically systematic investigation of electromigration in solders. (c) American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1929870
http://hdl.handle.net/11536/13710
ISSN: 0003-6951
DOI: 10.1063/1.1929870
期刊: APPLIED PHYSICS LETTERS
Volume: 86
Issue: 20
結束頁: 
顯示於類別:期刊論文


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  1. 000229398000095.pdf