標題: Extraction of substrate parameters for RF MOSFETs based on four-port measurement
作者: Wu, SD
Huang, GW
Chen, KM
Chang, CY
Tseng, HC
Hsu, TL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: four-port measurement;radio frequency (RF);metal oxide semiconductor field effect transistors (MOSFETs);substrate resistance
公開日期: 1-六月-2005
摘要: In this work, a new method for extracting substrate parameters of radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs) based on four-port measurement is presented. A T-liked substrate resistance network is used and the values of all components in the cold MOSFETs were extracted directly from the four-port data between 250 MHz and 8.5 GHz. The output admittance Y-22 can be well modeled up to 26.5 GHZ based on the extracted substrate resistances and the other extrinsic capacitances extracted from an active device.
URI: http://dx.doi.org/10.1109/LMWC.2005.850566
http://hdl.handle.net/11536/13688
ISSN: 1531-1309
DOI: 10.1109/LMWC.2005.850566
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 15
Issue: 6
起始頁: 437
結束頁: 439
顯示於類別:期刊論文


文件中的檔案:

  1. 000229653500017.pdf