標題: Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
作者: Chang, YA
Kuo, HC
Lu, CY
Kuo, YK
Wang, SC
光電工程學系
Department of Photonics
公開日期: 1-六月-2005
摘要: Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 mu m are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (TO) values of 155 K in a temperature range of 25-95 degrees C and 179 K in a temperature range of 25-85 degrees C are obtained from a 4 x 1000 mu m(2) ridge waveguide uncoated laser diode. The To value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 degrees C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
URI: http://dx.doi.org/10.1088/0268-1242/20/6/020
http://hdl.handle.net/11536/13686
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/6/020
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 20
Issue: 6
起始頁: 601
結束頁: 605
顯示於類別:期刊論文


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  1. 000230260700021.pdf