標題: A novel process-compatible fluorination technique with electrical characteristic improvements of poly-Si TFTs
作者: Wang, SD
Lo, WH
Chang, TY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CF4 plasma;fluorine;fluorine passivation;poly-Si;process-compatible;reliability;TFTs
公開日期: 1-六月-2005
摘要: A process-compatible fluorine passivation technique of poly-Si thin-film transistors (TFTs) was demonstrated by employing a novel CF4 plasma treatment. Introducing fluorine atoms into poly-Si films can effectively passivate the trap states near the SiO2/poly-Si interface. With fluorine incorporation, the electrical characteristics of poly-Si TFTs can be significantly improved including a steeper subthreshold slope, smaller threshold voltage, lower leakage current, higher field-effect mobility, and better On/Off current ratio. Furthermore, the CF4 plasma treatment also improves the reliability of poly-Si TFTs with respect to hot-carrier stress, which is due to the formation of strong Si-F bonds.
URI: http://dx.doi.org/10.1109/LED.2005.848095
http://hdl.handle.net/11536/13683
ISSN: 0741-3106
DOI: 10.1109/LED.2005.848095
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 6
起始頁: 372
結束頁: 374
顯示於類別:期刊論文


文件中的檔案:

  1. 000229522000010.pdf