標題: The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs
作者: Yu, DS
Liao, CC
Cheng, CF
Chin, A
Li, MF
McAlister, SP
奈米科技中心
Center for Nanoscience and Technology
關鍵字: bias-temperature instability (BTI);germaniumon-insulator (GOI);high kappa;LaAlO3;metal gate;three-dimensional (3-D)
公開日期: 1-六月-2005
摘要: We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μ m CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-κ LaAlO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 nm. The metal-gate/high-κ/GOI p-and n-MOSFETs displayed threshold voltage (V-t) shifts of 30 and 21 mV after 10 MV/cm, 85 ° C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-κ-Si CMOSFETs. An extrapolated maximum voltage of -1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs.
URI: http://dx.doi.org/10.1109/LED.2005.848130
http://hdl.handle.net/11536/13641
ISSN: 0741-3106
DOI: 10.1109/LED.2005.848130
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 6
起始頁: 407
結束頁: 409
顯示於類別:期刊論文


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  1. 000229522000021.pdf