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dc.contributor.authorChu, Yi-Chengen_US
dc.contributor.authorZhan, Chau-Jieen_US
dc.contributor.authorLin, Han-Wenen_US
dc.contributor.authorHuang, Yu-Weien_US
dc.contributor.authorChen, Chihen_US
dc.description.abstractThe electromigration test of the microbump interconnects with Cu/Cu6Sn5/Cu structure is reported in this study. This Cu6Sn5 intermetallic compound layer was single-crystal like. The diameter of the microbumps in die-to-die stacking was 30 mu m. Test vehicles were applied by a current density of 2.2x10(5) A/cm(2) and settled on a hotplate at 150 degrees C. The resistances of the microbumps were simultaneously monitored by the four point probe during the test procedure. The Cu6Sn5 transformed into Cu3Sn in the early stage and porous Cu3Sn generated in the Cu6Sn5 layer at later stages. The morphology of porous Cu3Sn could be caused by the current direction. The decomposition of Cu6Sn5 into Cu3Sn and Sn occurs during the EM test. The migration of Sn atoms to the periphery of the under-bump-metallization was forced by the current stress, which may be the mechanism of the pore formation with the pore volume of 41.4%. More porous Cu3Sn was found in the cathode end which was an evidence of the EM effect. Finite element analysis was used to do some calculation based on theoretical stoichiometry and microstructures in the test results. The resistivity of porous Cu3Sn structure which was about 30 mu Omega-cm which was three times larger than that of Cu3Sn. The porous Cu3Sn may threaten the reliability issues of microbumps.en_US
dc.subjectIntermetallic compound (IMC)en_US
dc.titleElectromigration in microbumps with Cu-Sn intermetallic compoundsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 International Conference on Electronics Packaging (ICEP)en_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Conferences Paper