Title: Heterogeneously integrated sub-40nm low-power epi-like Ge/Si monolithic 3D-IC with stacked SiGeC ambient light harvester
Authors: Shen, Chang-Hong
Shieh, Jia-Min
Huang, Wen-Hsien
Wu, Tsung-Ta
Chen, Chien-Fu
Kao, Ming-Hsuan
Yang, Chih-Chao
Lin, Chein-Din
Wang, Hsing-Hsiang
Hsieh, Tung-Yang
Chen, Bo-Yuan
Huang, Guo-Wei
Chang, Meng-Fan
Yang, Fu-Liang
Department of Photonics
Issue Date: 2014
Abstract: For the first time, we report heterogeneously integrated sub-40nm epi-like Ge/Si monolithic 3D-IC with low-power logic/NVM circuits and efficient photovoltaic energy harvester. Threshold voltage engineering and driving current boosting technologies enable stackable Ge/Si UTB (< 15nm) MOSFETs, CMOS inverter and SRAM (SNM=270mV@0.7V) achieve low operation voltage. Stackable 1-T NVM with high speed (100ns) and low driving-voltage operation provide power-off storage while SRAM serve as power-on working memory. 100% aperture ratio SiGeC ambient light energy harvester with maximum output power of 7mW/cm(2) layered on the monolithic 3D-IC chip envisions a self-powered monolithic 3D-IC technology for advanced low-power wire-less sensor networks, wearable devices, and devices for Internet of Things.
URI: http://hdl.handle.net/11536/136395
ISBN: 978-1-4799-8000-0
Appears in Collections:Conferences Paper