標題: High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
作者: Hung, BF
Chiang, KC
Huang, CC
Chin, A
McAlister, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-kappa;LaAlO3;thin-film transistors (TFTs);threshold voltage
公開日期: 1-六月-2005
摘要: We have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.
URI: http://dx.doi.org/10.1109/LED.2005.848622
http://hdl.handle.net/11536/13639
ISSN: 0741-3106
DOI: 10.1109/LED.2005.848622
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 6
起始頁: 384
結束頁: 386
顯示於類別:期刊論文


文件中的檔案:

  1. 000229522000014.pdf