Title: Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
Authors: Liu, CY
Wu, PH
Wang, A
Jang, WY
Young, JC
Chiu, KY
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: conduction mechanism;nonvolatile memory;resistive switching memory;SrZrO3
Issue Date: 1-Jun-2005
Abstract: Sputter-deposited Cr-doped SrZrO3-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.
URI: http://dx.doi.org/10.1109/LED.2005.848073
http://hdl.handle.net/11536/13638
ISSN: 0741-3106
DOI: 10.1109/LED.2005.848073
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 6
Begin Page: 351
End Page: 353
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