標題: Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier
作者: Chai, CY
Huang, JA
Lai, YL
Wu, JW
Chang, CY
Chan, YJ
Cheng, HC
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: Au/Mo/Ti/Ge/Pd metallization;ohmic contact;n-type GaA
公開日期: 1-Apr-1996
摘要: Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n(+)-GaAs with the Si-doping concentration of about 2 x 10(18) cm(-3). The minimum specific contact resistivity as low as 1.2 x 10(-7) Ohm . cm(2) can be obtained after the rapid thermal annealing at 325 degrees C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325 degrees C to 400 degrees C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.
URI: http://dx.doi.org/10.1143/JJAP.35.2110
http://hdl.handle.net/11536/1363
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.2110
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 4A
起始頁: 2110
結束頁: 2111
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