標題: Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
作者: Chen, KM
Hu, HH
Huang, GW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: body-contact device;floating-body effect;hot-carrier stress;low-frequency noise;SOI MOSFET
公開日期: 1-六月-2005
摘要: In this study, we determined the effects of hot-carrier stress on the low-frequency noise characteristics of partially depleted metal-oxide-semi conductor field-effect transistors (MOSFETs) in silicon-on-insulator (SOI) technology. In devices with a floating-body configuration, kink-related excess noise was observed due to the floating-body effect. The level of this excess noise decreased after normal-mode stress, while it was masked by 1/f noise after reverse-mode stress. The effects of stress-generated interface traps on the drain-to-body leakage current and the floating-body effect were also determined and used to explain the noise behavior. Moreover, the stress-induced 1/f noise degradation in floating-body devices and body-contact devices was studied. It was found that the 1/f degradation of body-contact devices is more significant than that of floating-body devices after hot-carrier stress.
URI: http://dx.doi.org/10.1143/JJAP.44.3832
http://hdl.handle.net/11536/13616
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.3832
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 6A
起始頁: 3832
結束頁: 3835
顯示於類別:期刊論文


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  1. 000230126000038.pdf