Title: Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits
Authors: Ker, MD
Hsu, KC
電機學院
College of Electrical and Computer Engineering
Keywords: electrostatic discharge (ESD);ESD protection circuits;latchup;silicon controlled rectifier (SCR)
Issue Date: 1-Jun-2005
Abstract: An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
URI: http://dx.doi.org/10.1109/TDMR.2005.846824
http://hdl.handle.net/11536/13611
ISSN: 1530-4388
DOI: 10.1109/TDMR.2005.846824
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 5
Issue: 2
Begin Page: 235
End Page: 249
Appears in Collections:Articles


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