標題: Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits
作者: Ker, MD
Hsu, KC
電機學院
College of Electrical and Computer Engineering
關鍵字: electrostatic discharge (ESD);ESD protection circuits;latchup;silicon controlled rectifier (SCR)
公開日期: 1-六月-2005
摘要: An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
URI: http://dx.doi.org/10.1109/TDMR.2005.846824
http://hdl.handle.net/11536/13611
ISSN: 1530-4388
DOI: 10.1109/TDMR.2005.846824
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 5
Issue: 2
起始頁: 235
結束頁: 249
顯示於類別:期刊論文


文件中的檔案:

  1. 000230223000012.pdf