標題: Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
作者: Huang, SY
Chen, KM
Huang, GW
Liang, V
Tseng, HC
Hsu, TL
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: cut-off frequency;hot-carrier effect;linearity;power gain;power-added efficiency;SiGeHBT
公開日期: 1-Jun-2005
摘要: Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.
URI: http://dx.doi.org/10.1109/TDMR.2005.846829
http://hdl.handle.net/11536/13609
ISSN: 1530-4388
DOI: 10.1109/TDMR.2005.846829
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 5
Issue: 2
起始頁: 183
結束頁: 189
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000230223000004.pdf