|標題:||The Demonstration of Low-cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly found Dielectric Fuse Breakdown|
|作者:||Hsieh, E. R.|
Huang, Z. H.
Chung, Steve S.
Ke, J. C.
Yang, C. W.
Tsai, C. T.
Yew, T. R.
Department of Electronics Engineering and Institute of Electronics
|摘要:||For the first time, the dielectric fuse breakdown has been observed in HKMG and poly-Si CMOS devices. It was found that, different from the conventional anti-fuse dielectric breakdown, such as the hard and soft breakdowns, this new fuse-breakdown behavior exhibits a typical property of an open gate and can be operated in much lower programming current (<50 mu A), fast speed (similar to 20 mu sec), and excellent data retention, in comparison to the other fuse mechanisms. Based on this new mechanism, we have designed a smallest memory cell array which can be easily integrated into state-of-the-art advanced CMOS technology to realize highly reliable, secure, and dense OTP functionality with very low cost to meet the requirements of memory applications in the IoT era.|
|期刊:||2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)|
|Appears in Collections:||Conferences Paper|