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dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorWijers, CMJen_US
dc.contributor.authorLiu, JLen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:18:53Z-
dc.date.available2014-12-08T15:18:53Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://dx.doi.org/10.1209/epl/i2004-10516-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/13597-
dc.description.abstractWe have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We demonstrate that the local field is of paramount importance in the description of such layers. The changes in ellipsometric parameters are 2 to 3 orders of magnitude above the detection limit of a modern ellipsometer.en_US
dc.language.isoen_USen_US
dc.titleInterband magneto-optical transitions in a layer of semiconductor nano-ringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1209/epl/i2004-10516-7en_US
dc.identifier.journalEUROPHYSICS LETTERSen_US
dc.citation.volume70en_US
dc.citation.issue5en_US
dc.citation.spage656en_US
dc.citation.epage662en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000229819000014-
dc.citation.woscount2-
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