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dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorWijers, CMJen_US
dc.contributor.authorLiu, JLen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2019-04-03T06:42:50Z-
dc.date.available2019-04-03T06:42:50Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.71.245332en_US
dc.identifier.urihttp://hdl.handle.net/11536/13596-
dc.description.abstractIn this paper a comparative theoretical study was made of the magneto-optical response of square lattices of nanoobjects (dots and rings). Expressions for both the polarizability of the individual objects as their mutual electromagnetic interactions (for a lattice in vacuum) was derived. The quantum-mechanical part of the derivation is based upon the commonly used envelope function approximation. The description is suited to investigate the optical response of these layers in a narrow region near the interband transitions onset, particularly when the contribution of individual level pairs can be separately observed. A remarkable distinction between clearly quantum-mechanical and classical electromagnetic behavior was found in the shape and volume dependence of the polarizability of the dots and rings. This optical response of a single plane of quantum dots and nanorings was explored as a function of frequency, magnetic field, and angle of incidence. Although the reflectance of these layer systems is not very strong, the ellipsometric angles are large. For these isolated dot-ring systems they are of the order of magnitude of degrees. For the ring systems a full oscillation of the optical Bohm-Ahronov effect could be isolated. Layers of dots do not display any remarkable magnetic field dependence. Both type of systems, dots and rings, exhibit an outspoken angular-dependent dichroism of quantum-mechanical origin.en_US
dc.language.isoen_USen_US
dc.titleMagneto-optical response of layers of semiconductor quantum dots and nanoringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.71.245332en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume71en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000230276900087en_US
dc.citation.woscount17en_US
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