標題: Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
作者: Cheng, CC
Chien, CH
Chen, CW
Hsu, SL
Yang, MY
Huang, CC
Yang, FL
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;high-k gate dielectric;HfOxNy;post-deposition-annealing
公開日期: 1-六月-2005
摘要: We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfOxNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 angstrom with a low leakage current of 1.8 x 10(-5) A/cm(2) at V-G = -1V was achieved after 600 degrees C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.
URI: http://dx.doi.org/10.1016/j.mee.2005.04.033
http://hdl.handle.net/11536/13593
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.04.033
期刊: MICROELECTRONIC ENGINEERING
Volume: 80
Issue: 
起始頁: 30
結束頁: 33
顯示於類別:會議論文


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  1. 000231517000008.pdf