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dc.contributor.authorLee, Ming-Yien_US
dc.contributor.authorTsai, Yi-Chiaen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSamukawat, Seijien_US
dc.date.accessioned2017-04-21T06:49:29Z-
dc.date.available2017-04-21T06:49:29Z-
dc.date.issued2015en_US
dc.identifier.isbn978-0-6925-1523-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/135788-
dc.description.abstractIn this work, an efficient method is proposed to calculate the miniband structure and density of states for well-ordered Ge/Si-nanodisk array. Within the envelop-function framework, our approach surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and provides a guideline for three-dimensional quantum dots design by simulating the effect of the interdot space on miniband structure.en_US
dc.language.isoen_USen_US
dc.subjectGe/Si quantum dotsen_US
dc.subjectComputational modelen_US
dc.subjectMiniband structureen_US
dc.subjectDensity and size of nanostructuresen_US
dc.titleElectronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Arrayen_US
dc.typeProceedings Paperen_US
dc.identifier.journal18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015)en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000380398200037en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper