標題: 3D structural construction of GaN-based light emitting diode by confocal micro-Raman spectroscopy
作者: Li, Heng
Chang, Chiao-Yun
Cheng, Hui-Yu
Chen, Wei-Liang
Huang, Yi-Hsin
Lu, Tien-Chang
Chang, Yu-Ming
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: GaN;pattern sapphire substrate;confocal Raman microspectroscopy
公開日期: 1-Jan-2016
摘要: The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E-2(high) Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E-2(high) Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.
URI: http://dx.doi.org/10.1117/12.2208856
http://hdl.handle.net/11536/135700
ISBN: 978-1-5106-0003-4
ISSN: 0277-786X
DOI: 10.1117/12.2208856
期刊: LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX
Volume: 9768
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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