標題: Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor deposition
作者: Chang, TC
Yeh, WK
Chang, CY
Jung, TG
Tsai, WC
Huang, GW
Mei, YJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: epilayers;ultrahigh-vacuum chemical vapor deposition system;uniformity
公開日期: 1-四月-1996
摘要: In this work, we explored the Ge fraction, layer thickness and dopant concentration uniformity of epilayers grown by an ultrahigh-vacuum chemical vapor deposition system (UHV/CVD). Three epilayers were grown for this study: a single epilayer of SiGe, a heavily boron doped Si epilayer and a Si/SiGe superlattice with p(+) Si cap. The uniformity in a wafer was measured to be less than +/- 1.5%. In addition, we explored the wafer-to-wafer uniformity of a strained SiGe layer. The variations in thickness and composition between two samples grown in the same run were evaluated to be +/- 1.3 and +/- 1.2%, respectively. These results show that uniform layers can be simultaneously obtained on many wafers by the UHV/CVD system.
URI: http://dx.doi.org/10.1016/0254-0584(95)01645-B
http://hdl.handle.net/11536/1357
ISSN: 0254-0584
DOI: 10.1016/0254-0584(95)01645-B
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 44
Issue: 1
起始頁: 95
結束頁: 99
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UF28800015.pdf