標題: Significant Improvement of GaN Crystal Quality with Ex-situ Sputtered AlN Nucleation Layers
作者: Chen, Shuo-Wei
Yang, Young
Wen, Wei-Chih
Li, Heng
Lu, Tien-Chang
光電工程學系
Department of Photonics
關鍵字: light-emitting diodes (LEDs);AlN;internal quantum efficiency (IQE);multiple quantum wells (MQWs);sputter
公開日期: 1-Jan-2016
摘要: Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).
URI: http://dx.doi.org/10.1117/12.2211721
http://hdl.handle.net/11536/135699
ISBN: 978-1-5106-0003-4
ISSN: 0277-786X
DOI: 10.1117/12.2211721
期刊: LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX
Volume: 9768
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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