Title: Performance and reliability of poly-Si TFTs on FSG buffer layer
Authors: De Wang, S
Chang, TY
Chien, CH
Lo, WH
Sang, JY
Lee, JW
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: buffer layer;fluorine;fluorinated silicate oxide (FSG);polycrystalline silicon thin-film transistors (poly-Si TFTs);reliability
Issue Date: 1-Jul-2005
Abstract: A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.
URI: http://dx.doi.org/10.1109/LED.2005.851242
http://hdl.handle.net/11536/13557
ISSN: 0741-3106
DOI: 10.1109/LED.2005.851242
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 7
Begin Page: 467
End Page: 469
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