標題: Performance and reliability of poly-Si TFTs on FSG buffer layer
作者: De Wang, S
Chang, TY
Chien, CH
Lo, WH
Sang, JY
Lee, JW
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: buffer layer;fluorine;fluorinated silicate oxide (FSG);polycrystalline silicon thin-film transistors (poly-Si TFTs);reliability
公開日期: 1-七月-2005
摘要: A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.
URI: http://dx.doi.org/10.1109/LED.2005.851242
http://hdl.handle.net/11536/13557
ISSN: 0741-3106
DOI: 10.1109/LED.2005.851242
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 7
起始頁: 467
結束頁: 469
顯示於類別:期刊論文


文件中的檔案:

  1. 000230150400014.pdf