標題: High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts
作者: Lee, YJ
Chao, TS
Huang, TY
電子物理學系
Department of Electrophysics
公開日期: 1-七月-2005
摘要: In this study, the characteristics of DT-pMOSFETs are discussed using the reverse Schottky substrate contacts. With this diode, the DTMOS can be operated at high voltage and temperature. In addition, it exhibited an improved driving current, DIBL, transconductance, and subthreshold slope. The driving current for DTMOS was 20% larger, and was 12 mV improved for DIBL under DTMOS operation. Furthermore, the NBTI effects of DTMOS were also reported for the first time. This is because DTMOS could operate just below 0.7 V of V-G due to the junction turn-on behavior. It is interesting to note that the shift of the Delta V-TH of pMOSFETs under NBTI measurement was significantly alleviated in the DT operating mode, about 30 mV improved after 10,000 s stressing, due to the alleviated electrical field across the gate oxide which was due to the substrate bias and the threshold voltage adjustment under DTMOS operation. (c) 2005 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2005.01.002
http://hdl.handle.net/11536/13553
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2005.01.002
期刊: MICROELECTRONICS RELIABILITY
Volume: 45
Issue: 7-8
起始頁: 1119
結束頁: 1123
顯示於類別:期刊論文


文件中的檔案:

  1. 000230374600010.pdf