|標題:||A Comprehensive Transport Model for High Performance HEMTs Considering the Parasitic Resistance and Capacitance Effects|
|作者:||Hung, C. M.|
Li, K. C.
Hsieh, E. R.
Wang, C. T.
Kou, C. I.
Chang, Edward Y.
Chung, Steve S.
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
|摘要:||HEMT suffers from parasitic resistance (R-sd) and capacitance(C-gd) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R-sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C-gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.|
|期刊:||2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)|
|Appears in Collections:||Conferences Paper|