Title: Low noise RF MOSFETs on flexible plastic substrates
Authors: Kao, HL
Chin, A
Hung, BF
Lee, CF
Lai, JM
McAlister, SP
Sarnudra, GS
Yoo, WJ
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
Keywords: associated gain;MOSFET;plastic;RF noise
Issue Date: 1-Jul-2005
Abstract: We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.
URI: http://dx.doi.org/10.1109/LED.2005.851238
http://hdl.handle.net/11536/13533
ISSN: 0741-3106
DOI: 10.1109/LED.2005.851238
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 7
Begin Page: 489
End Page: 491
Appears in Collections:Articles


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