標題: Low noise RF MOSFETs on flexible plastic substrates
作者: Kao, HL
Chin, A
Hung, BF
Lee, CF
Lai, JM
McAlister, SP
Sarnudra, GS
Yoo, WJ
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
關鍵字: associated gain;MOSFET;plastic;RF noise
公開日期: 1-七月-2005
摘要: We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.
URI: http://dx.doi.org/10.1109/LED.2005.851238
http://hdl.handle.net/11536/13533
ISSN: 0741-3106
DOI: 10.1109/LED.2005.851238
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 7
起始頁: 489
結束頁: 491
顯示於類別:期刊論文


文件中的檔案:

  1. 000230150400021.pdf