標題: A robust high-Q micromachined RF inductor for RFIC applications
作者: Lin, JW
Chen, CC
Cheng, YT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: accelerative and thermal disturbance system;high-Q micromachined inductor;radio frequency integrated circuit (RFIC);robust design;signal stability
公開日期: 1-七月-2005
摘要: In this paper, a robust micromachined spiral inductor with a cross-shaped sandwich membrane support is proposed and fabricated with fully CMOS compatible post-processes for radio frequency integrated circuit (RFIC) applications. Via the incorporation of a sandwich dielectric membrane (0.7 mu M SiO2/0.7 mu M Si3N4/0.7 mu m TEOS) to enhance the structure rigidity, the inductor can have better signal stability. In comparison, the new design of a similar to 5-nH micromachined inductor can have 45% less inductance variation than the one without the dielectric support while both devices are operated with 10 m/s(2) acceleration. Meanwhile, using a cross shape instead of blanket membrane can also effectively eliminate the inductance variation induced by the working temperature change (20 degrees C to 75 degrees C). The measurement results show the robust inductor can have similar electrical performance to the as-fabricated freely suspended inductor, which has five times Q (quality factor) improvement than the inductor without the substrate removal. It is our belief that the new micromachined inductors can have not only high-Q performance but also better signal stability suitable for wide-range RFIC applications.
URI: http://dx.doi.org/10.1109/TED.2005.850612
http://hdl.handle.net/11536/13514
ISSN: 0018-9383
DOI: 10.1109/TED.2005.850612
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 7
起始頁: 1489
結束頁: 1496
顯示於類別:期刊論文


文件中的檔案:

  1. 000230123100028.pdf