標題: Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
作者: Chen, KM
Peng, AS
Huang, GW
Chen, HY
Huang, SY
Chang, CY
Tseng, HC
Hsu, TL
Liang, V
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: linearity;power-added efficiency;power gain;SiGeHBT;temperature
公開日期: 1-七月-2005
摘要: In this paper, the power gain, power-added efficiency (PAE) and linearity of power SiGe heterojunction-bipolar transistors at various temperatures have been presented. The power characteristics were measured using a two-tone load-pull system. For transistors biased with fixed base voltage, the small-signal power gain and PAE of the devices increase with increasing temperature at low base voltages, while they decrease at high base voltages. Besides, the linearity is improved at high temperature for all voltage biases. However, for devices with fixed collector current, the small-signal power gain, PAE, and linearity are nearly unchanged with temperature. The temperature dependence of power and linearity characteristics can be understood by analyzing the cutoff frequency, the collector current, Kirk effect and nonlinearities of transconductance at different temperatures.
URI: http://dx.doi.org/10.1109/TED.2005.850633
http://hdl.handle.net/11536/13513
ISSN: 0018-9383
DOI: 10.1109/TED.2005.850633
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 7
起始頁: 1452
結束頁: 1458
顯示於類別:期刊論文


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  1. 000230123100023.pdf