|標題:||In-Ga-O based double-heater phase change memory cell|
|作者:||Wang, S. -L.|
Chen, C. -Y.
Hsieh, M. -K.
Lee, W. -C.
Kung, A. H.
Peng, L. -H.
Department of Photonics
|關鍵字:||nonvolatile memory;phase-change memory (PCM);indium gallium oxide|
|摘要:||We report a new type of phase-change materials based upon the compound of In-Ga-O. It is found to exhibit two-order of magnitude resistivity change between the high-resistive amorphous phase and the low-resistive cubic phase at a phase-change temperature similar to 250 degrees C. When the In-Ga-O is incorporated into a nonvolatile phase change memory (PCM) device with a double-heater (DH) structure, it exhibits an on/off resistance ratio of 1000 and cycling over 300 times which are superior to those observed on a single-heater (SH) PCM device. These results, together with a low bias point of 70 mu A at 6.5 volt and 1.5mA at 3.5 volt, respectively, for set/ reset operation of the DH-PCM device to the crystalline/amorphous state, suggest that In-Ga-O is a promising material candidate for low power application of PCM devices.|
|期刊:||2008 JOINT NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP AND INTERNATIONAL CONFERENCE ON MEMORY TECHNOLOGY AND DESIGN, PROCEEDINGS|
|Appears in Collections:||Conferences Paper|