|標題:||Probing mobility gaps at resistivity minima in the integer quantum Hall effect|
|作者:||Liang, C. -T.|
Chen, K. Y.
Lin, S. D.
Tseng, Yen Shung
Cheng, K. A.
Huang, C. F.
Department of Electronics Engineering and Institute of Electronics
|摘要:||Magneto-transport measurements are performed on the AlGaAs/GaAs quantum Hall (QH) devices fabricated recently by our group. A series of Hall plateaus are observed with increasing the perpendicular magnetic field, and the mobility gaps resulting from localization effects are investigated at the minima in the longitudinal resistivity. Only the gap corresponding to the filling factor i=2 is close to the expected cyclotron energy, and our study supports that the low-field QH conductors may suffer problems due to insufficient localization. The anomalous change on the Hall slope is observed when the i=3 plateau is destroyed by the large current.|
|期刊:||2008 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST|
|Appears in Collections:||Conferences Paper|