|標題:||In0.11Ga0.89N-based p-i-n photodetector|
|作者:||Su, Y. K.|
Lee, H. C.
Lin, J. C.
Huang, K. C.
Lin, W. J.
Li, T. C.
Chang, K. J.
Department of Electrophysics
|摘要:||The InGaN photodetector with a In composition of i-In0.11Ga0.89N active layer have been fabricated by MOCVD system. From the photoluminescence measurement, the FWHM of InGaN epitaxial layer was only 13.8 nm. The strong luminescence peak was located at wavelength of 399 nm. We also found that the FWHM of X-ray diffraction of GaN and InGan layer were 218 and 350 arcsec, respectively. Clear photo-responses are also observed in InGaN photodetector with 11% content at responsivity measurement. The cut-off range of spectral responsivity was occurred at 400 nm. The highest spectral responsivity of photodetector was 0.206 A/W at wavelength of 380 nm. The rejection ratio was approached to 103. The external quantum efficiency was about 67%. The current density-voltage (J-V) characteristic of i-InGaN p-i-n photodetector was measured. The dark and photo current density were 1.77x10(-4) A/cm(2) and 4.5x10(-2) A/cm(2) when biased at -3 V, respectively. At photovoltaic characteristics, the V-oc and J(sc) of the i-InGaN photodetector are 1.63 V and 3.1x10(-2) A/cm(2), respectively. The fill factor of i-InGaN p-i-n photodetector was about 37%. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim|
|期刊:||PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2|
|Appears in Collections:||Conferences Paper|