標題: Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs
作者: Liu, TA
Lin, GR
Lee, YC
Wang, SC
Tani, M
Wu, HH
Pan, CL
光電工程學系
Department of Photonics
公開日期: 1-七月-2005
摘要: We report ultrafast (similar to 2.7 ps, instrument limited) switching responses of a multienergy- implanted GaAs:As' photoconductive switches (PCSs) with suppressed trailing edge and reduced dark. current. This material is highly resistive with dark current as low as 0.94 mu A at a bias of 40 V. The carrier mobility of the former is similar to 590 cm(2)/V s, resulting in a small-signal optical responsivity of similar to 2 mA/W. Pumped at 100 mW and biased at 80 V, the multienergy-implanted GaAs: As+ PCS exhibits peak response (0.35 V) comparable to the best result of single-energy-implanted ones. The improvement on photoconductive response is crucial for the generation of shorter terahertz emission pulses from spiral antennas fabricated on multienergy-implanted GaAs:As+ (0.8 ps) than single-energy-implanted GaAs (1.2 ps), with the central frequency blueshifted to 0.2 THz (from 0.15 THz) and the spectral bandwidth broadened to 0.18 THz (from 0.11 THz). (c) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1953867
http://hdl.handle.net/11536/13499
ISSN: 0021-8979
DOI: 10.1063/1.1953867
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 98
Issue: 1
結束頁: 
顯示於類別:期刊論文


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