標題: Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
作者: Chen, JF
Hsiao, RS
Wang, CK
Wang, JS
Chi, JY
電子物理學系
Department of Electrophysics
公開日期: 1-七月-2005
摘要: The effect of strain relaxation in a relaxed InAs quantum dot (QD) capped with InGaAs is investigated by admittance and deep-level transient spectroscopy (DLTS). Strain relaxation markedly increases the emission time in the QD region and extends carrier depletion to the bottom GaAs layer. The experimental data show the presence of relaxation traps in the QD region and the neighboring bottom GaAs.layer. The electron emission from the QD region is governed by a trap located at 0.17-0.21 eV below the QD ground state. The electron-escape process is identified as thermal activation at high temperatures and direct tunneling at low temperatures from the trap. In the bottom GaAs layer near the QD, DLTS reveals a relaxation trap at 0.37-0.41 eV relative to the GaAs conduction band. The energy difference between these two traps is comparable to the QD ground-state energy relative to the GaAs conduction-band edge, suggesting that the two traps may be the same trap which is pinned to the GaAs conduction band. The considerable difference between their properties may result from different atoms surrounding the trap. (c) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1957124
http://hdl.handle.net/11536/13498
ISSN: 0021-8979
DOI: 10.1063/1.1957124
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 98
Issue: 1
結束頁: 
顯示於類別:期刊論文


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