Title: A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage
Authors: Luo, Guang-Li
Huang, Shih-Chiang
Chung, Cheng-Ting
Heh, Dawei
Chien, Chao-Hsin
Cheng, Chao-Ching
Lee, Yao-Jen
Wu, Wen-Fa
Hsu, Chiung-Chih
Kuo, Mei-Ling
Yao, Jay-Yi
Chang, Mao-Nan
Liu, Chee-Wee
Hu, Chenming
Chang, Chun-Yen
Yang, Fu-Liang
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2009
Abstract: For the first time, growth of high-quality Ge-rich Ge1-xSix (0 <= x <= 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n(+)-Ge1-xSix/p-Ge1-xSix is compared with n(+)-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.
URI: http://hdl.handle.net/11536/134939
ISBN: 978-1-4244-5639-0
Begin Page: 645
End Page: +
Appears in Collections:Conferences Paper