|標題:||3D-TCAD Simulation Study of the Contact All Around T-FinFET Structure for 10nm Metal-Oxide-Semiconductor Field-Effect Transistor|
Chung, Steve S.
Department of Electronics Engineering and Institute of Electronics
|摘要:||We propose a new device structure, namely CAA T-FinFET, for 10nm MOSFETs with using contact all around (CAA) structure. According to 3D simulation study, the CAA T-FinFET possess many advantages over the conventional FinFET structure, such as short channel effect (SCE) suppression by self-aligned oxide (SA oxide), parasitic leakage path isolation with body-tied bulk, sourceldrain series resistance reducing and fin to fin pitch scaling by contact all around process. Base on heterogeneous bulk for strain application, CAA T-FinFET has better electrical performance and easy process control. All these advantages are achieved by depositing a self-aligned oxide after isotropic etching in SID region. Contact all around can efficiently solve the series resistance degradation and pitch scaling by replacing diamond-shape SID stressor with the full contact metal. CAA T-FinFET has high potential to be applied to the varied heterogeneous substrate and high mobility channel (Ge and III-V) MOSFETs by SA oxide.|
|期刊:||2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)|
|Appears in Collections:||Conferences Paper|