|標題:||Optimization of gate insulator material for GaN MIS-HEMT|
|作者:||Lin, Y. C.|
Lin, T. W.
Wu, C. H.
Yao, J. N.
Hsu, H. T.
Shih, W. C.
Chang, E. Y.
Department of Materials Science and Engineering
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
|關鍵字:||SiO2;La2O3;MIS;Ga HEMT;power device|
|摘要:||Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.|
|期刊:||2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)|
|Appears in Collections:||Conferences Paper|