Title: Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
Authors: Shi, JW
Hsu, HC
Huang, FH
Liu, WS
Chyi, JI
Lu, JY
Sun, CK
Pan, CL
光電工程學系
Department of Photonics
Keywords: photodiode (PD);high-power photodiode;optical receivers
Issue Date: 1-Aug-2005
Abstract: We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (similar to 1 ps) materials, under high dc bias voltages.
URI: http://dx.doi.org/10.1109/LPT.2005.850886
http://hdl.handle.net/11536/13447
ISSN: 1041-1135
DOI: 10.1109/LPT.2005.850886
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 17
Issue: 8
Begin Page: 1722
End Page: 1724
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