Title: Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride
Authors: Liao, Chan-Yu
Lin, Hsiao-Chun
Wang, Chao-Lung
Lee, I-Che
Chou, Chia-Hsin
Li, Yu-Ren
Cheng, Huang-Chung
Department of Electronics Engineering and Institute of Electronics
Keywords: Excimer laser crystallization (ELC);light absorption layer;single-crystal-like;polycrystalline silicon (poly-Si);thin-film transistor (TFT)
Issue Date: Sep-2016
Abstract: High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation.
URI: http://dx.doi.org/10.1109/LED.2016.2588735
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2588735
Volume: 37
Issue: 9
Begin Page: 1135
End Page: 1138
Appears in Collections:Articles