Title: Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
Authors: Huy Binh Do
Quang Ho Luc
Minh Thien Huu Ha
Sa Hoang Huynh
Hu, Chenming
Lin, Yueh Chin
Chang, Edward Yi
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
Keywords: High mobility III-V semiconductor;flat band voltage;interface trap density;C-V hysteresis;effective work function
Issue Date: Sep-2016
Abstract: Accurate determination of the flat band voltage (V-FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V-FB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V-FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.
URI: http://dx.doi.org/10.1109/LED.2016.2594802
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2594802
Volume: 37
Issue: 9
Begin Page: 1100
End Page: 1103
Appears in Collections:Articles