標題: Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
作者: Lai, FI
Kuo, HC
Chang, YH
Tsai, MY
Chu, CP
Kuo, SY
Wang, SC
Tansu, N
Yeh, JY
Mawst, LJ
光電工程學系
Department of Photonics
關鍵字: InGaAsN;1.3 mu m;VCSEL;quantum-dot-like state;strain compensation
公開日期: 1-八月-2005
摘要: The effects of nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2 - 3 nm in size was found in the interface of In(0.4)Ga(0.6)As(0.98)N(0.02) and GaAs. Our investigations indicate that high nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs system influenced carrier localization and might cause the formation of the dot-like states.
URI: http://dx.doi.org/10.1143/JJAP.44.6204
http://hdl.handle.net/11536/13426
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.6204
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 8
起始頁: 6204
結束頁: 6207
顯示於類別:期刊論文


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  1. 000232029500066.pdf